By Bruce A. Tuttle, Chonglin Chen, Quanxi Jia, R. Ramesh
Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric skinny movies are incorporated during this quantity. Dielectric, piezoelectric and ferroelectric skinny movies have a huge effect on quite a few advertisement and army platforms together with tunable microwave units, stories, MEMS units, actuators and sensors. contemporary paintings on piezoelectric characterization, AFE to FE dielectric part transformation dielectrics, answer and vapor deposited skinny motion pictures, and fabrics integration are one of the subject matters incorporated. Novel ways to nanostructuring, characterization of fabric homes and actual responses on the nanoscale is also included.Content:
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Extra resources for Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films, Volume 162
Waser, J. Am. Ceram. Soc. 74, 1934 (1991) Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films • 31 Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films Edited by Bruce A. Tuttle, Chonglin Chen, Quanxi Jia and R. Ramesh Copyright © 2005. Y. Yau, R. Palan, K. C. %) are studied using x-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman scattering. % excess Bi BIT films. %. % Bi excess) films; implying that during film growth, Bi first goes to the Bi202 layer in which the Bi site has higher stability than that in the perovskite-like slab.
The results indicate that the PSTO thin films have very large dielectric tunability but with much higher applied electric field and larger dielectric loss value than its bulk material, probably due to its nonstoichiometry and growth defects. To fully understand the physical properties of PSTO thin films and to explore its advantage to the high frequency tunable microwave element applications, we have synthesized and investigated the PSTO thin films on (001) LaAlOß (LAO) by pulsed laser deposition.
Bi excess, at which second phase emerges. % Bi excess films respectively. 8,11. Comparing this mode with that in single crystal,11 this mode in thin film is usually lower than that of single crystal because of the existence of residue stress in thin films. % Bi excess films thus possibly indicates a stress relaxation. 12,14 The appearance of this mode does not depend on the point group symmetry of the ciystal but is a consequence of the weakness of the interlayer bonding12 and thus this mode can be observed in both ferroelectric and paraelectric phases.
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